发明名称 Inspection method for semiconductor light-emitting device and manufacturing method for semiconductor light-emitting device
摘要 An inspection method for a semiconductor light-emitting device includes an image capturing step for irradiating light to the semiconductor light emitting device so as to excite an active layer and capturing an image of photoluminescence released from the active layer, an inspection region extracting step for extracting an inspection region of the captured image, a luminance average determination step for, determining as defective when a luminance average is smaller than a predetermined threshold, a luminance variance determination step for determining as defective when a luminance variance is larger than a predetermined threshold, and a total determination step for totally determining the semiconductor light-emitting device as defective when determined the semiconductor light emitting device as defective in at least one of the two determination results.
申请公布号 US9395406(B2) 申请公布日期 2016.07.19
申请号 US201414168953 申请日期 2014.01.30
申请人 NICHIA CORPORATION 发明人 Abe Masatoshi
分类号 G01R31/26;G01N21/64;H01L33/00;G01R31/265 主分类号 G01R31/26
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A method of inspecting a semiconductor light-emitting device having an active layer, the method comprising: irradiating the semiconductor light-emitting device with light of a shorter wavelength than light emitted from the active layer, using an irradiating light source; capturing an image of photoluminescence emitted from the active layer upon the irradiation of the semiconductor light-emitting device, using an image sensor; extracting a region of the semiconductor light-emitting device from the captured image, as an inspection region, using a computer; calculating an average value of a photoluminescence intensity over pixels in the inspection region, using the computer; calculating a variation value indicating a degree of variation of the photoluminescence intensity over the pixels in the inspection region, using the computer; and determining that the semiconductor light-emitting device is defective upon determining that at least one of (i) the average value of the photoluminescence intensity is smaller than a predetermined first threshold, and (ii) the variation value is larger than a predetermined second threshold, using the computer.
地址 Anan-Shi JP