THIN-FILM TRANSISTOR AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem with ON-state current and OFF-state current of a thin-film transistor, and to provide a thin-film transistor capable of high-speed operation. SOLUTION: The thin-film transistor has: a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is doped to form source and drain regions and which is provided with a space therebetween so as to be overlapped at least partly with a gate electrode via a gate insulating layer; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the pair of impurity semiconductor layers in which an impurity element imparting one conductivity is doped, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of conductive layers and extending between the pair of conductive layers. COPYRIGHT: (C)2010,JPO&INPIT