| 摘要 |
A method is provided for forming metal contacts to nanotube devices in a standard CMOS process flow. In accordance with one feature, a method for forming source/drain contacts to nanotube devices acting as FETs is provided while minimizing metal contamination to the complementary metal oxide semiconductor (CMOS) circuitry in a standard CMOS process flow. The method includes forming nanotube devices on a semiconductor substrate during a front end process of a CMOS process flow, while forming metallic contacts for the nanotube devices during a back end process of the CMOS process flow. This enables the formation of nanotube devices to be integrated within a standard CMOS process flow, thereby opening avenues to commercializing new generation of RFCMOS technology where superior RF/analog circuitry based on nanotube devices can be combined with digital circuitry based on standard silicon CMOS.
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