| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can improve the source-drain breakdown voltage, while keeping the FD-SOI performance, and to provide a manufacturing method for such a semiconductor device, as well as, to provide a semiconductor device that can improve tolerant power leading to the element destruction, and to provide a manufacturing method for such a semiconductor device. SOLUTION: The semiconductor device has an SOI substrate structure, comprising a semiconductor support substrate, an insulating layer formed on the semiconductor support substrate, and an SOI layer formed on the insulating layer. A drain region and a source region are formed on the SOI layer, wherein the source region is in contact with the insulating layer, while the drain region is not in contact with the insulating layer. COPYRIGHT: (C)2009,JPO&INPIT
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