SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE USING IT, AND THEIR MANUFACTURING METHODS

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device with higher operation characteristics and reduce power consumption of a semiconductor integrated circuit.

SOLUTION: Crystal plane orientations of single crystal semiconductor layer that become a channel region of an N conductivity type thin film transistor and a channel region of a P conductivity type thin film transistor both formed on the same substrate flat surface are formed to be optimum crystal plane orientations in the respective thin film transistors. With such a constitution, carrier mobilities flowing through the channels are improved to provide a semiconductor device with higher operation characteristics. Further, low voltage driving becomes possible to ensure low power consumption.

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