发明名称 |
Electrode for thin film capacitor devices |
摘要 |
A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.
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申请公布号 |
US7545625(B2) |
申请公布日期 |
2009.06.09 |
申请号 |
US20070004178 |
申请日期 |
2007.12.20 |
申请人 |
RAYTHEON COMPANY |
发明人 |
DRAB JOHN J.;DOUGHERTY THOMAS K.;KEHLE KATHLEEN A. |
分类号 |
H01G4/06;H01L27/105;H01G4/008;H01G4/10;H01G4/33;H01L21/02;H01L21/316;H01L21/8246 |
主分类号 |
H01G4/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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