发明名称 System memory board subsystem using DRAM with integrated high speed point to point links
摘要 A memory system comprising memory modules including memory chips including integrated switching circuits. A memory controller coupled to the memory modules is configured to initiate memory accesses. When a switching circuit within a memory chip detects the memory access, the switching circuit routes the access to another memory module if the access is not directed to a memory chip of the receiving memory module, or processes the access locally if the access is directed to a memory chip of the receiving memory module. The memory controller and memory modules are coupled via bi-directional serial links. Each memory module may include multiple switching circuits, each of which may be coupled to fewer than all of the memory chips within the memory module. Switching circuits further include circuitry configured to de-serialize data prior to conveyance to a memory chip, and serialize data received from a DRAM chip prior to transmitting the received data.
申请公布号 US7533212(B1) 申请公布日期 2009.05.12
申请号 US20050254948 申请日期 2005.10.20
申请人 SUN MICROSYSTEMS, INC. 发明人 DOBLAR DREW G.;RISK GABRIEL C.;WU CHUNG-HSIAO
分类号 G06F12/02 主分类号 G06F12/02
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