| 摘要 |
Microelectronic structures and associated methods for reducing short channel effects in transistors are generally described. In one example, an apparatus includes a semiconductor channel, one or more transistor gates coupled with the semiconductor channel, a spacer film coupled to the one or more transistor gates, and a semiconductor material epitaxially grown (epi-growth) on the semiconductor channel wherein the epi-growth is coupled to the to the spacer film to reduce short channel effects of the one or more transistor gates by effectively increasing the transistor gate length.
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