| 摘要 |
The present invention relates to a nitride-based light emitting device having a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate, wherein an Al1-xSixN interlayer is formed inside of the n-type nitride semiconductor layer. Accordingly, threading dislocation generated from the initial stage of the growth of the n-type nitride-based semiconductor layer can be reduced, and tensile strain can be decreased, thereby implanting a nitride-based light emitting device with high reliability.
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