ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

An organic thin film transistor substrate and a method of manufacturing the same are provided to form a source electrode and a drain electrode in a gate insulating layer, thereby preventing a change of a film property of an organic semiconductor layer by a step. A gate insulating layer(40) is formed on a gate line(20) and a data line. The gate insulating layer insulates the gate and data lines. A data bridge electrode(39) connects the first and second data lines(33,35) which are disconnected. And the data bridge electrode is formed in a bridge groove(47) of the gate insulating layer. An organic thin film transistor(60) is maintained by charging a pixel voltage signal in a pixel electrode(90) in respond to a gate driving signal supplied to the gate line. The organic semiconductor layer(70) is formed after surface-processing the gate insulating layer, a source electrode(63) and a drain electrode(65) overlapped with the gate electrode(61).