| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method in which the incorporation of metallic impurities into a growing SiC single crystal can be minimized to prevent the SiC single crystal from taking different polymorphic crystal forms other than a desired crystal form. <P>SOLUTION: In this method, a super-high purity raw material 2a and a high purity raw material 2b are used together such that crystal growth is performed by a sublimation gas of the super-high purity raw material 2a in the stage of the initial period of growth of the SiC single crystal 4, and crystal growth is performed by a sublimation gas of the high purity raw material 2b after the initial period of growth. This can minimize the incorporation of metallic impurities into the growing SiC single crystal 4 even when the super-high purity raw material 2a and the high purity raw material 2b are used together, thereby capable of preventing the single crystal from taking different polymorphic crystal forms other than a desired crystal form in the initial period of growth of the SiC single crystal 4. This allows the reduction in material cost compared with the case where the SiC single crystal 4 is grown only by the super-high purity raw material 2a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
