发明名称 |
METHOD OF FORMING A LOW TEMPERATURE-GROWN BUFFER LAYER, LIGHT EMITTING ELEMENT, METHOD OF MAKING SAME, AND LIGHT EMITTING DEVICE |
摘要 |
A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate. |
申请公布号 |
KR100887470(B1) |
申请公布日期 |
2009.03.10 |
申请号 |
KR20060028774 |
申请日期 |
2006.03.30 |
申请人 |
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发明人 |
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分类号 |
H01L33/00;H01L33/06;H01L33/12;H01L33/32;H01L33/42;H01L33/54;H01L33/56;H01L33/60;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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