PYROELECTRIC TYPE INFRARED DETECTOR

摘要

PURPOSE:To prevent the influence of a signal read-out part by visible light by forming adjacently the signal charge read-out function part and an IR detecting part provided with a through-region penetrating through a semiconductor substrate on the substrate to connect each other and making incident IR rays thereon from the rear side. CONSTITUTION:An oxide film is formed over the entire surface of an Si wafer by a thermal oxidation method and the oxide film is removed from the part where an IR detecting element is constituted on one side. A recess is formed in said part by anisotropic chemical etching. The oxide film on the surface opposite from the side facing the recess is removed away and the wafer is anisotropically etched from both sides to form a through-part 25. A shift register and conductive part 28 are formed as the signal charge read-out part near the through-part 25. Electrodes 23, 24 of the pyroelectric type IR detecting element 22 consisting of a thin sheet of PbTiO3 ceramics or LiTaO3 crystal are separately formed and are fixed by a conductive adhesive agent 27 and adhesive agent 29 to the step part of the through-part 25. The register 21 and the electrode 23 are connected by the vapor deposition of Al. The IR rays are made incident on the detector from the rear side.