| 摘要 |
The method for producing semiconductor nanocrystal materials on a dielectric material substrate by a chemical vapor deposition, where the nanocrystal is covered with a nitride layer, comprises germinating stable germ cells on the substrate with a first precursor gas (11), growing the materials with a second precursor gas, and passivating the nitride layer of semiconductor material on the semiconductor nanocrystal material from the second precursor gas with a third precursor gas to generate selective and stoichiometric nitride semiconductor material. The method for producing semiconductor nanocrystal materials on a dielectric material substrate by a chemical vapor deposition, where the nanocrystal is covered with a nitride layer, comprises germinating stable germ cells on the substrate with a first precursor gas (11), growing the materials with a second precursor gas, and passivating the nitride layer of semiconductor material on the semiconductor nanocrystal material from the second precursor gas with a third precursor gas to generate selective and stoichiometric nitride semiconductor material. The steps of germ formation, nanocrystal formation and passivation are carried out in an enclosure. The first precursor gas, the second precursor gas and the mixture of the second and the third precursor gas are introduced into the enclosure according to the continuous flow. The passivation step is carried out for lower than 8 minutes. Preparation of a surface of the dielectric material substrate is carried out before germination by chemical attack of the surface using HF, HF-RCA or RCA so as to form the hydroxyl groups on the surface of the substrate and to support the formation of germs. The germination is carried out at a deposition temperature and during the time of exposure, the first precursor gas obtains a density of germs >= 10 1> 0> germs per cm 2>. The germs have a size of = 10 nm. The growing of nanocrystal is carried out at a deposition temperature and during the time of exposure, the second precursor gas and a partial pressure of the second precursor gas are selected according to the size of the nanocrystal. The temperature and the time of deposition of growing step are higher than the temperature and the time of the deposition of the germination step. Independent claims are included for: (1) a memory cell; and (2) a flash memory. |
