| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CMR layer of a CMOS integrated circuit by a method that can be commercially achieved in a manufacturing method of the CMR layer in the CMOS integrated circuit, including CMP of the CMR layer in a manufacturing process. <P>SOLUTION: A forming method for forming a CMR layer in a CMOS device, using CMP (chemical mechanical polishing) for patterning the CMR layer comprises a step of preparing a silicon substrate including the formation of a lower electrode in the silicon substrate; a step of depositing an SiN<SB>x</SB>layer on the silicon substrate; a step of patterning and etching the SiN<SB>x</SB>layer for forming a damascene trench on the lower electrode; a step of depositing a CMR material layer on the SiN<SB>x</SB>layer and the damascene trench; a step of removing the CMR material layer, covering the SiN<SB>x</SB>layer by CMP and leaving the CMR material layer in the damascene trench; and a step of completing a CMOS structure. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
