| 摘要 |
PROBLEM TO BE SOLVED: To avoid the deterioration of short channel characteristics which is caused by a silicon germanium layer touching the channel of a strained SOI transistor, and to provide a double-gated strained SOI transistor as well as the strained SOI transistor combined with an usual silicon or a SOI transistor on a single wafer. SOLUTION: In an insulated gate FET, for example, a strained silicon layer 5 is grown on a strain relief silicon germanium layer 4, and then the silicon germanium layer is partially removed, so as to constitute a channel layer by the strained silicon layer. COPYRIGHT: (C)2008,JPO&INPIT
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