发明名称 PAGE BY PAGE ECC VARIATION IN A MEMORY DEVICE
摘要 <p>A method of storing memory device data overhead information in data cells in a row of cells, the row being one of a plurality of rows comprising a unit of data, is disclosed. The method includes storing user data attribute information including error correction code (922) in an overhead portion of a data sector in the row adjacent to a portion of the data sector storing user data (902). Block level data attributes are stored in the overhead portion of the data sector in a location (924) occupied by ECC information in other rows, said row having greater user data integrity and fewer ECC bits than others of said rows.</p>
申请公布号 WO2008083161(A1) 申请公布日期 2008.07.10
申请号 WO2007US88830 申请日期 2007.12.26
申请人 SANDISK CORPORATION;MOKHLESI, NIMA 发明人 MOKHLESI, NIMA
分类号 G11C16/04;G06F11/10 主分类号 G11C16/04
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