| 摘要 |
The present invention relates to a high pressure hydrogen annealing method for MOSFET semiconductor device, and more particularly, to effectively remove a supersaturated hydrogen on a high-k insulating layer treated by a high pressure hydrogen annealing so that the reliability of a device is improved. In other words, in order to decrease an interfacial charge, it is required to perform a high density and a high pressure hydrogen annealing. In this case, a hydrogen is included at an interface and a bulk of a high-k insulating layer, resulting in improving the initial operational characteristics of a device by passivating interfacial charge existing at an interface, but deteriorating the reliability of a device due to the hydrogen remaining in the insulating bulk. Therefore, in the present invention, a high pressure hydrogen annealing is performed and the subsequent annealing is performed under an inert gas atmosphere for a long time to effectively remove hydrogen molecules remaining at the bulk.
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