| 发明名称 |
Method to create super secondary grain growth in narrow trenches |
| 摘要 |
The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it is related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.
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| 申请公布号 |
US7452812(B2) |
申请公布日期 |
2008.11.18 |
| 申请号 |
US20070733650 |
申请日期 |
2007.04.10 |
| 申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW |
发明人 |
BEYER GERALD;BRONGERSMA SYWERT H. |
| 分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
| 代理机构 |
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