| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an electro-optical device capable of forming a high quality silicon oxide film free from electrical leakage on a polysilicon film without increasing thickness. SOLUTION: The polysilicon film formed like an island as a semiconductor layer 1a constituting a TFT 30 as a switching element is heated by means of a sheet-fed semiconductor manufacturing device using a resistance-heating-type heater as a heat source under temperature conditions for releasing film stress occurring in oxidative reaction on the surface of the polysilicon film to form a gate insulation film 2 made of the silicon oxide film. Thus, the high quality gate insulation film 2 (silicon oxide film) free from electric leak can be formed on the surface of a semiconductor layer 1a (polysilicon film) without increasing the thickness. That is, by releasing the concentration of the film stress during the oxidative reaction by thermal energy, a corner of the polysilicon film can be rounded, thereby preventing a protrusion from occurring on the surface of the polysilicon film. COPYRIGHT: (C)2009,JPO&INPIT
|
