| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride ased semiconductor laser element, having proper laser oscillation characteristics. SOLUTION: A multiple quantum well structure active layer 6 comprises two In<SB>0.2</SB>Ga<SB>0.8</SB>N quantum well layers and one In<SB>0.05</SB>Ga<SB>0.95</SB>N barrier layer, forming an oscillating part. The thickness of each In<SB>0.2</SB>Ga<SB>0.8</SB>N quantum well layer is not larger than 10 nm. A p-Al<SB>0.1</SB>Ga<SB>0.9</SB>N p-type clad layer 9 has a flat part, whose thickness is 0.05-0.5μm and a ridge part whose width is 1-3μm. An SiO<SB>2</SB>insulating film 13 is formed on the flat part of the p-Al<SB>0.1</SB>Ga<SB>0.9</SB>N p-type clad layer 9 and on a side surface of the ridge part of the same. A p-side electrode 11, electrically connected to the ridge part, is formed on the SiO<SB>2</SB>insulating film 13 and on the top surface of the ridge part. COPYRIGHT: (C)2008,JPO&INPIT
|
