| 摘要 |
<p>A method for forming patterns of semiconductor devices is provided to perform easily a pattern shrink process by improving coating characteristics of RELACS materials using a rinse process. In a method for forming patterns of semiconductor devices to coat water-soluble materials on photosensitive film patterns, a surface of the photosensitive film patterns(115) is rinsed using a composition(120) having a polymer and water before coating the water-soluble materials on the photosensitive film patterns. At this time, the photosensitive film patterns are formed on a substrate(113) through a lithography process. The surface of the photosensitive film patterns is rinsed using the composition having the polymer and water. After coating RELACS(Resolution Enhancement Lithography Assisted by Chemical Shrink) materials(117) on the rinsed photosensitive film patterns, baking is performed. Then the baked resultant is washed. The composition includes compounds of 0.0001 to 5 weight percent and water of the rest weight percent. The composition further includes alcohol of C4 to C10.</p> |
