发明名称 |
METHOD FOR AVOIDING COLLAPSE IN DEVELOPED PATTERN |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing defects in a semiconductor device during manufacturing, particularly, collapse in a pattern without sacrifying the throughput, and to provide a process solution for the method. SOLUTION: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacturing of semiconductor devices. In certain preferable modes, the process solution may reduce post-development defects such as pattern collapse when the solution is employed as a rinse solution either during or after the development of the patterned photoresist layer. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008146099(A) |
申请公布日期 |
2008.06.26 |
申请号 |
JP20080026436 |
申请日期 |
2008.02.06 |
申请人 |
AIR PRODUCTS & CHEMICALS INC |
发明人 |
ZHANG PENG;DANIELLE MEGAN KING;KARWACKI EUGENE JOSEPH JR;BARBER LESLIE COX |
分类号 |
G03F7/32;G03F7/004;G03F7/09;G03F7/16;G03F7/30;G03F7/38;G03F7/40;G03F7/42;H01L21/027;H01L21/304 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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