| 摘要 |
A GaN wafer for an electronic device is provided to improve a leakage current characteristic and a power characteristic by easily forming a schottky contact when source, drain and gate electrodes are formed. A lower n-GaN layer(21) is grown on a GaN seed. A i-GaN layer(22) is grown on the lower n-GaN layer, compensated by p-type dopants to generally have half-insulation. An upper n-GaN layer(23) is grown on the i-GaN layer. The carrier density of the lower and upper n-GaN layers can fall within a scope of 10^18-10^20/cubic centimeter. The lower and upper n-GaN layers can be doped with silicon or oxygen.
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