| 摘要 |
Provided is a substrate treating apparatus, which holds a wafer (W) rotatably by a substrate holding portion, which subjects the wafer (W) to a rinsing treatment such that a drainage cup (51) is disposed to enclose the outer side of the wafer (W), by feeding a treating liquid to the wafer (W) while rotating the wafer (W), and which then subjects the wafer (W) to a rinsing treatment by feeding a rinsing liquid to the wafer (W) while rotating the substrate. The rinsing treatment is controlled to execute at first the step of feeding the rinsing liquid while controlling the rotating speed of the wafer (W) to that for the rinsing treatment, the step of raising the liquid level of the rinsing liquid in the drainage cup (51) by decreasing the speed of the wafer (W) or increasing the feed of the rinsing liquid, and the step of increasing the speed of the wafer (W) thereby to raise the arriving position of the rinsing liquid at the outer circumference wall of the drainage cup (51).
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