| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a PIN diode having a comparatively large height relative to the surface of a substrate with a good yield. SOLUTION: In a method of manufacturing a PIN diode 100 having a PIN structure 120 and lower and upper electrodes 140 and 160, the PIN structure 120 includes a lower semiconductor layer 112, an intrinsic semiconductor layer 122 and an upper semiconductor layer 124 sequentially, laminated on a semiconductor substrate 110. The method includes steps of forming the PIN structure 120 on the surface of the semiconductor substrate 110, coating the surface of the semiconductor substrate 110 with a resist material to form a resist layer 150 having such a thickness that the surface of the resist layer is higher than the PIN structure 120 for the surface of the semiconductor 110, removing part of the resist layer 150, and depositing a conductive material on a region exposed from the resist layer 150. COPYRIGHT: (C)2008,JPO&INPIT
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