| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of dry cleaning that can remove the source of dust generated from the inside wall of a semiconductor etching apparatus. SOLUTION: The method includes a first cleaning process, comprising a step of supplying a process gas comprising a combination of different gases containing fluorine into a process chamber with multiple steps, etching a material to be processed being a stacked film containing Al with multi step, removing a stacked material containing the material to be processed adhered in the process chamber using a gas containing B; and a second cleaning step of removing the ion sputtering material of the inside constructing material of the process chamber adhered in the process chamber using the gas containing B. COPYRIGHT: (C)2008,JPO&INPIT
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