| 摘要 |
A semiconductor memory device includes an aligning signal generator, a data aligning unit, a data transmitting controller and a data transmitter. The aligning signal generator receives a data strobe signal to output aligning signals. The data aligning unit aligns a plurality of data pieces input in succession in response to the aligning signals. The data transmitting controller generates a data transmitting signal synchronized with the transition of the aligning signal. The data transmitter transmits an aligned data output from the data aligning unit to a data storage area in response to the data transmitting signal. A method for driving the semiconductor memory device includes aligning data pieces input in succession as parallel data in response to a data strobe signal, generating a data transmitting signal corresponding to transition of the data strobe signal and transmitting the parallel data to a data storage area in response to the data transmitting signal.
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