| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with which a memory cell using a thyristor can be obtained without a need of a special process while an inexpensive bulk semiconductor substrate is used. <P>SOLUTION: The semiconductor device 1a is provided with a DRAM cell with a thyristor structure, which has an n-type cathode n(K) arranged on a surface side of a p-type semiconductor substrate 100, a p-type base p(B) disposed in a surface layer of the n-type cathode n(K), an n-type base n(B) and a p-anode p(A) which are sequentially arranged on the base and a gate electrode G arranged on the p-type base p(B). <P>COPYRIGHT: (C)2008,JPO&INPIT |
