| 摘要 |
<p>An alignment key of a semiconductor device is provided to avoid formation of a step in an amorphous carbon layer used as a hard mask layer by forming a line pattern of a lattice structure in a space pattern of an alignment key and by forming a plurality of space patterns whose line width is minimized. A predetermined depth of a substrate is etched to form a first line/space pattern(110,120). A second line pattern of a lattice structure is formed in the first space pattern to form an alignment key including a second line/space pattern(130,135) having a line width of 100-5000 Å. A hard mask layer can be formed on the resultant structure, made of an amorphous carbon layer.</p> |
