发明名称 SELECTIVE BARRIER SLURRY FOR CHEMICAL-MECHANICAL POLISHING
摘要 PROBLEM TO BE SOLVED: To provide a selective barrier slurry for chemical mechanical polishing. SOLUTION: An aqueous polishing composition useful for polishing a semiconductor substrate is provided. The composition comprises 0.05 to 50 weight percent abrasive and 0.001 to 5 weight percent iota type carrageenan. The iota type carrageenan has a concentration for accelerating the removal rate of tantalum, tantalum nitride, and other tantalum-containing materials. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008016841(A) 申请公布日期 2008.01.24
申请号 JP20070167285 申请日期 2007.06.26
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 BIAN JINRU
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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