| 摘要 |
PROBLEM TO BE SOLVED: To provide a supersonic bonding method capable of controlling temperatures in plasma cleaning. SOLUTION: The supersonic bonding method of a semiconductor chip including a plasma cleaning process, wherein a formula finding a rise temperature of the cleaned object based on the scanning speed of a plasma nozzle, a distance between the plasma nozzle and a cleaned object, and a plasma power and the proper constant of the cleaned object used for the formula are stored in advance, combinations of a plurality of plasma powers and the scanning speeds of the plasma nozzles are calculated from the formula by setting the rise temperature of the cleaned object, one arbitrary combination is selected out of the combinations, and the cleaned object is cleaned at the selected plasma power and the scanning speed of the plasma nozzle while keeping the cleaned object at the set temperature. COPYRIGHT: (C)2008,JPO&INPIT
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