| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for efficiently suppressing a leak current. <P>SOLUTION: A semiconductor device has a P-channel type TFT on a substrate having an insulating surface, and has a first region doped with an impurity element for providing P type on a region of an active layer of the P-channel type TFT where it is overlapped with a gate electrode, wherein the active layer of the P-channel type TFT has an N-conductive type second region provided so as to surround the first region. With this device, a region having a high barrier in energy is formed on a portion where current path is easily formed to prevent the occurrence of a leak current (short channel leak). <P>COPYRIGHT: (C)2007,JPO&INPIT |
