METHOD OF FORMING A BURIED BIT LINE

摘要

A method for forming a buried bit line is provided to obtain low resistance from the bit line by forming thickly a silicide layer using a cobalt film selectively formed at an inner portion of a bit line groove. A groove(53) for a buried metal line is formed by etching a semiconductor substrate. A metal film is formed at sides and bottom of the groove by using an electroless plating process. A silicide layer(95) is formed at the sides and bottom of the groove by performing a silicidation process on the resultant structure using a first heat treatment. The metal film is made of one selected from a group consisting of Co, Ni, Ti, Pt, Pd or the combination thereof.