METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to form transistors of different structures having various operation characteristics through a simple process. A first gate oxide layer(110) and a first conductive layer are formed on a substrate, and a buffer film is formed to form the first conductive layer in a first region. The first conductive layer and the first gate oxide layer are patterned to form mold film patterns. A gap between the mold film patterns is filled with silicon oxide to form mask patterns. The mold film pattern and the substrate are etched to form a second active region having active pins. The first gate oxide layer, the mask pattern and the buffer film are removed to expose the second active region. A second gate oxide layer(132a) and a second conductive layer are formed on the second active region, and are patterned to form first and second gate electrodes.