发明名称 SOLID STATE IMAGING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a solid state imaging element capable of improving detection sensitivity by reducing a floating capacity. SOLUTION: The solid state imaging element comprises a transfer element train for transferring electric charges that have been photoelectric-converted by a photoelectric conversion element train consisting of a plurality of photoelectric conversion elements, and a charge detector 14 for detecting electric charges that have been transferred by the transfer element train. The electric charge detector 14 comprises output gates 21 and 22 so arranged as to adjoin a final transfer gate 29 of the transfer element train, a reset gate 23 for resetting electric charges of the electric charge detector 14, a floating diffuser 26 formed on a substrate surface to adjoin the output gates 21 and 22 and the reset gate 23, and additional gates 31a and 31b formed along the edge on the floating diffuser 26 in the direction heading for the reset gate 23 from the output gate 22. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007165530(A) 申请公布日期 2007.06.28
申请号 JP20050358911 申请日期 2005.12.13
申请人 NEC ELECTRONICS CORP 发明人 TANAKA MAKOTO
分类号 H01L27/148;H01L21/339;H01L29/762;H04N1/028;H04N5/335;H04N5/369;H04N5/372 主分类号 H01L27/148
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