| 摘要 |
A compound metal comprising MO<SUB>x</SUB>N<SUB>y </SUB>which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the MO<SUB>x</SUB>N<SUB>y </SUB>compound metal. Furthermore, the MO<SUB>x</SUB>N<SUB>y </SUB>metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (PMOS) device. In the above formula, M is a metal selected from Group IVB, VB, VIB or VIIB of the Periodic Table of Elements, x is from about 5 to about 40 atomic % and y is from about 5 to about 40 atomic %.
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