| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent clogging of a dicer which forms an isolation groove at a semiconductor wafer, and to satisfactorily secure an yield of a semiconductor device segmented from the semiconductor wafer. <P>SOLUTION: The base material of a second adhesive 40 with which a cavity R is filled is made to be epoxy, and a suitable amount of filler particles are mixed there which are composed of silica with a diameter of about 2-4 μm. A filling method can be dripping of the second adhesive onto the sidewall face of the semiconductor wafer or dipping the edge of the semiconductor wafer in the level of the second adhesives. By using liquid epoxy of low viscosity, the cavity R is filled uniformly with the second adhesives utilizing capillary phenomenon. On the surface of an exposed n-type layer 12a, an n-electrode 50 is formed by evaporative deposition using a resist mask. A half-cut isolation groove S is formed by dicing from the surface of the exposed n-type layer 12a toward the second adhesives 40. <P>COPYRIGHT: (C)2007,JPO&INPIT |
