Semiconductor device for power semiconductor engineering area has intermetal dielectric between conducting path layers by insulated filling layer such that silicon oxygen nitride layer is formed on dielectric

摘要

The device has a support substrate (S), and a conducting path layer (5) formed on the support substrate and including openings (L). An insulated filling layer (6) is formed on the conducting path layer and the support substrate. A silicon oxygen nitride-layer (7) is formed on the filling layer, where another conducting path layer (9) is formed over the layer (7). A masking layer is formed between the layers (7, 9) and has silicon oxide and silicon carbide. An intermetal dielectric is provided between the path layers by the filling layer such that the layer (7) is formed on the dielectric. The conducting path layer (5) has aluminum, copper, nickel and tungsten, where the conducting path layer (9) has copper, nickel, nickel-palladium and nickel platinum. Independent claims are also included for the following: (1) a power semiconductor component with a logic transistor area and a power transistor area; and (2) a double-diffused metal oxide power semiconductor component with a logic transistor area.