| 摘要 |
A method of manufacturing semiconductor devices is provided. The device includes a trench capacitor formed in a semiconductor substrate for configuring a DRAM cell together with a cell transistor. The method comprises forming a trench in a semiconductor substrate; forming a collar insulation film on sidewalls of the trench, the collar insulator extending to a surface of the semiconductor substrate; forming a trench capacitor in the trench; introducing ions into a part of the collar insulation film by implanting ions of an impurity from one of slanting directions; etching off the ion-introduced part of the collar insulation film through the use of a difference in etching rate from other parts of the collar insulation film; and forming a buried strap in the trench above the trench capacitor.
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