GATE PATTERN OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING IT

摘要

PROBLEM TO BE SOLVED: To provide a gate pattern of semiconductor device which can improve embedding capability of an inter-layer dielectric to be embedded between gate patterns, and improve embedding capability of a landing plug forming material, and to provide a method of forming it.

SOLUTION: A gate pattern of an semiconductor device comprises a gate insulating film 114 formed inside a trench 112 formed on a substrate 110 and on a surface of the substrate 110, a first gate electrode layer 116A embedded in the trench 112 so that it is not extruded out of the top face of the gate insulating film 114 in an area where the trench 112 is not formed, and a second gate 120A formed on the first gate electrode layer 116A so that a part contacts the first gate electrode layer 116A.

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