METAL LINE FORMATION METHOD OF SEMICONDUCTOR DEVICE

摘要

A metal line formation method of a semiconductor device is provided to prevent a sidewall of a metal line by adjusting a plasma gas ratio and plasma generation power in a main etch process and an over-etch process. An insulating layer(120) is formed on a semiconductor substrate(100) having a predetermined base structure. A metal layer is formed on the insulating layer. A photosensitive layer pattern(210) is formed on the metal layer. A main etch process is performed to form a metal line by etching the metal layer using the photosensitive layer pattern as an etch mask. An over-etch process is performed to etch a part of the insulating layer by using the photosensitive pattern as the etch mask.