发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent non-filling of resin in a cavity, resin leakage or a weld defect, etc. so as to enhance the yield of a product, by making air vent depths constant and sealing with resin, regardless of the thickness of a substrate. SOLUTION: In manufacture of this semiconductor integrated circuit device, a molding die 6 is used which has a plurality of the air vents 7c and in which a movable pin 1 where a groove 1a is formed at its tip is provided to protrude to respective air bents 7c, and the tip of the movable pin 1 is pushed to a multi-cavity substrate 40 and the die is clamped. Thus, depths of the respective air vents 7c are made constant irrespective of the fluctuation of thickness of the multi-cavity substrate 40, and the cavity can be filled with resin while air in the cavity is escaped through the groove 1a at the tip of the movable pin 1. This prevents non-filling of resin in the cavity, occurrence of resin leakage or the weld defect, and the yield of the product to be enhanced. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007036273(A) 申请公布日期 2007.02.08
申请号 JP20060247500 申请日期 2006.09.13
申请人 RENESAS TECHNOLOGY CORP;RENESAS EASTERN JAPAN SEMICONDUCTOR INC 发明人 KURATOMI BUNJI;SHIMIZU FUKUMI
分类号 H01L21/56;B29C45/14;B29C45/34;B29L31/34 主分类号 H01L21/56
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