METHOD OF FABRICATING THE TRENCH ISOLATION LAYER IN SEMICONDUCTOR DEVICE

摘要

A method for forming a trench isolation layer of a semiconductor device is provided to remove completely oxide particles generated due to a moat wet etching process by using a wet cleaning process. A pad oxide layer and a pad nitride layer are sequentially formed on a semiconductor substrate(200). A pad oxide pattern and a pad nitride pattern are formed by patterning selectively the pad oxide layer and the pad nitride layer. A trench(230) is formed on the resultant structure by etching an isolation region of the substrate. A sidewall oxide layer(240) is formed at an inner wall of the trench. A trench isolation layer(250) is filled in the trench. A moat wet etching process is performed on the resultant structure to remove partially the pad nitride pattern therefrom. At this time, oxide particles are generated on the resultant structure. A wet cleaning process is performed on the remaining nitride pattern to remove the oxide particles from the resultant structure.