发明名称 METHOD FOR TESTING A MEMORY DEVICE
摘要 A method for testing a memory device is provided to reduce the total test time, by performing the test for other memory cell blocks while the test for one memory cell block is performed. According to a method for testing a memory device comprising a bank consisting of a plurality of memory cell blocks, other memory cell blocks are activated at regular intervals after one of the memory cell blocks is activated. Sensing, read(or write) and precharge operations are performed as to the activated memory cell block among the memory cell blocks.
申请公布号 KR20060117469(A) 申请公布日期 2006.11.17
申请号 KR20050039257 申请日期 2005.05.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SHIM, YOUNG BO
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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