| 摘要 |
The present invention aims at providing a photodetector which can secure both a good S/N ratio and a high speed. With a photodetector 1, (KxMxN) photodiodes PD<SUB>k,m,n </SUB>are arranged in M rows and (KxN) columns in a photodetection unit 10, and processes (electric charge accumulation, CDS, filtering, and A/D conversion) regarding each of the (KxN) photodiodes PD<SUB>k,m,n </SUB>(k=1 to K, n=1 to N) of each row are carried out successively at each time T. Meanwhile, each of an electric charge accumulation operation in an integrating circuit 20 <SUB>m,n, </SUB>a CDS operation in a CDS circuit 30 <SUB>m,n, </SUB>a filtering operation in a filter circuit 40 <SUB>m,n, </SUB>and an A/D conversion operation in an A/D converter 50 <SUB>m,n </SUB>is carried out at each time (NxT).
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