| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multilayer circuit wiring board having a small stress to an interlayer connection via in that via holes for the interlayer connection are formed on the both sides of an insulating layer through the insulating layer, and to provide a BGA-type semiconductor device. <P>SOLUTION: The multilayer circuit wiring board comprises the via holes 41, 51 for the interlayer connection formed on the both sides of the insulating layer 10 through the insulating layers 20, 30. When a film thickness of the layer 10 is assumed as t, and the diameters of the via holes 41, 51 for interlayer connection are assumes as V<SB>D</SB>, there is a relationship of t<V<SB>D</SB>. When the diameters of the via holes 41, 51 are assumes as V<SB>D</SB>, and a distance between a central axis of the via hole 41 and a central axis of the via hole 51 is assumed as V<SB>C</SB>, there is a relationship of V<SB>C</SB>>2V<SB>D</SB>. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
