| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device including a capacitor employing a metal oxide dielectric in which reaction between a wiring material of Al and an electrode material of Pt can be suppressed effectively. SOLUTION: The process for fabricating a semiconductor device including a capacitor employing a metal oxide dielectric in a capacitance insulating film comprises a step for forming a first electrode 6 and a capacitance insulating film 7 on a semiconductor substrate through a first insulating film, a step for forming a second insulating film 9 on the first insulating film, a step for exposing the upper surface of the capacitance insulating film 7, a step for performing heat treatment in oxygen atmosphere, a step for forming a second electrode 10 consisting of a first conductive film 10a and second conductive films 10b, 10c laid in layer on the upper surface of the capacitance insulating film 7, a step for forming a third insulating film 13 on the second insulating film 9, a step for forming an opening 14 for exposing a part of the second electrode in the third insulating film, a step for forming a third conductive film 15 to cover the inside of the opening 14, and a step for forming a wiring layer 16 on the third conductive film 15. COPYRIGHT: (C)2006,JPO&NCIPI
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