SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device manufacturing method is composed of an element forming plane forming process wherein a plurality of element forming planes (50) having different heights are formed stepwise on a semiconductor layer (1); a semiconductor element forming process wherein semiconductor elements (51, 52) are formed on a region including the element forming planes (50); a step compensation insulating film forming process wherein a step compensation insulating film (28), which covers the semiconductor elements (51, 52) and has a stepwise surface along the element forming planes (50), is formed on the semiconductor layer (1); a peeling layer forming process wherein a peeling layer (31) is formed by ion-implanting a peeling material (30) into the semiconductor layer (1) through the step compensation insulating film (28); and a separating process of separating a part of the semiconductor layer (1) along the peeling layer (31).