| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
A method for manufacturing a semiconductor device including a transistor and capacitors formed over a silicon substrate, wherein hydrogen present at least on a part of the surface of the silicon substrate, hydrogen is removed by exposing the surface to a plasma produced from a first inert gas, a plasma is produced from a mixture gas of a second inert gas and one or more kinds of gas molecules, and thereby to form a silicon compound layer containing at least part of the elements constituting the gas molecules is formed on the surface of the silicon substrate. |
| 申请公布号 |
KR20060083232(A) |
申请公布日期 |
2006.07.20 |
| 申请号 |
KR20067011455 |
申请日期 |
2006.06.09 |
| 申请人 |
OHMI TADAHIRO |
发明人 |
OHMI TADAHIRO;SUGAWA SHIGETOSHI;HIRAYAMA MASAKI;SHIRAI YASUYUKI |
| 分类号 |
H01L21/31;H01L21/28;H01L21/306;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L21/76;H01L21/8234;H01L21/8239;H01L21/8246;H01L21/8247;H01L27/00;H01L27/088;H01L27/105;H01L27/115;H01L27/12;H01L29/49;H01L29/51;H01L29/78;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/31 |
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